Single-mode amplitude squeezing in a semiconductor laser at 780 nm

Citation
Ya. Fofanov et Iv. Sokolov, Single-mode amplitude squeezing in a semiconductor laser at 780 nm, OPT SPECTRO, 91(4), 2001, pp. 519-525
Citations number
18
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
OPTICS AND SPECTROSCOPY
ISSN journal
0030400X → ACNP
Volume
91
Issue
4
Year of publication
2001
Pages
519 - 525
Database
ISI
SICI code
0030-400X(200110)91:4<519:SASIAS>2.0.ZU;2-O
Abstract
The problem of the creation of a sub-Poissonian radiation source on the bas is of a semiconductor laser with an external cavity is considered, which op erates, from the viewpoint of quantum optics, in the single-mode regime. Th e conditions of the generation of sub-Poissonian radiation, under which the whole set of subthreshold modes, including the nearest modes of the extern al (long) cavity, is completely suppressed at room temperature, were experi mentally revealed and theoretically studied. Single-frequency low-noise las ing is of interest not only for the creation of nonclassical light sources, but also for sensitive spectroscopic applications in the classical domain. (C) 2001 MAIK "Nauka/Interperiodica".