Today the production of microlithographic projection lenses drives interfer
ometry to its very limits. Resolutions to a fraction of an Angstrom when me
asuring surface figure are necessary. Especially EUV lithography needs mirr
or surface qualities of approximately 0.1 nm RMS, with the consequence that
metrology needs accuracies significantly below 1 Angstrom. Repeatability o
f a measurement is limited by the quality of the interferometric setup itse
lf. Reproducibility is mainly influenced by handling, adjustment and therma
l adoption to the testpiece, whereas accuracy is limited by the calibration
process and procedure. Carl Zeiss uses a low coherent Fizeau interferomete
r with multi-fringe evaluation technique (DMI = Direct Measuring Interferom
etry) to accumulate many phase maps at video rate. Cavities are kept short,
air ventilation of the cavity during the measurements is applied. A weak a
spheric surface for EUV application (so called ELT2-EUV asphere) was tested
with a special interferometric setup using a single lens compensating syst
em. The reproducibility of the measurement came out as 0.07 nm RMS (surface
figure). The setup has been calibrated using a spherical calibration surfa
ce, whose accuracy was cross checked by two different absolute measurement
procedures. We found that both measurements differ by an amount of only 0.1
5 nm RMS (surface figure). Taking into account the systematic errors of the
interferometric setup, the accuracy of the asphere measurement can be esti
mated to 0.2 nm RMS (surface figure). Further improvements are necessary to
drive accuracy to even lower limits and to make test procedures ready for
production process.