Presence of a pseudo-gap feature in the density of states of disordered W/Si alloys

One of the most striking features of the high-temperature superconducting c uprates is the presence of a gap-like structure in the density of states ab ove the superconductive transition temperature, T-c. Analysis of conductanc e data from point-contact tunneling measurements on disordered W/Si thin fi lms shows the presence of similar gap-like features above T-c. Details of t he film growth and characterization are presented. A phase diagram which in cludes T-c and a pseudo-gap temperature, T* are presented. Published by Els evier Science BN.