Topography and magnetoresistance in Nd0.6Sr0.4MnO films

Citation
Jg. Lin et al., Topography and magnetoresistance in Nd0.6Sr0.4MnO films, PHYSICA C, 364, 2001, pp. 668-673
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
364
Year of publication
2001
Pages
668 - 673
Database
ISI
SICI code
0921-4534(200111)364:<668:TAMINF>2.0.ZU;2-Q
Abstract
The highly textured Nd0.6Sr0.4MnO3 thin films with different thickness t we re obtained. The maximum magnetoresistance (MR) ratio. defined as [R(0) - R (1.5 T)]/R(0) at the insulating- to metallic-phase transition temperature, was found to increase with decreasing t. reaching a value of 75% for t = 50 0 A. However, when t was further decreased down to 100 A, the MR ratio was not significantly affected. In conjunction with our topographic results, we have attributed the saturation of MR ratio to the achieving of an optimize d interface strain. (C) 2001 Elsevier Science B.V. All rights reserved.