Characteristics of photoconductive MoS2 films grown on NaCl substrates by a sequential process

Citation
N. Barreau et al., Characteristics of photoconductive MoS2 films grown on NaCl substrates by a sequential process, PHYS ST S-A, 187(2), 2001, pp. 427-437
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
187
Issue
2
Year of publication
2001
Pages
427 - 437
Database
ISI
SICI code
0031-8965(200110)187:2<427:COPMFG>2.0.ZU;2-Z
Abstract
MoS2 thin film deposition has been achieved on NaCl substrates. The films w ere obtained by solid state reaction between the constituents in thin film form. Multilayered sequences Mo/S/Mo...Mo/S were annealed under argon flow at 1023 K for half an hour. The films were characterized by X-ray diffracti on (XRD), scanning electron microscopy (SEM). electron microprobe analysis (EPMA), transmission electron microscopy (TEM). X-ray photoelectron spectro scopy (XPS) and photo-electrical measurements. The films are nearly stoichi ometric and crystallized in the expected 2H-MoS2 structure. Moreover. the f ilms are textured with the c-axis of the crystallites perpendicular to the plane of the substrate. XPS analysis reveals a small oxygen contamination o f the films, while Na, but no Cl, was detected at the surface of the sample s. The high conductivity and photoconductivity of the films agrees with a h igh crystalline quality. It is shown that Na is the key to achieve photocon ductive films. The crystallization process is discussed in the frame of a v an der Waals texturation model (pseudo epitaxy) onto dangling bond sulfur t erminated surfaces, assisted and strongly enhanced by Na diffusion through the MoS2 films thickness.