Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs

We have investigated the temperature dependence of photoluminescence (PL) e mission from sequentially grown Ga0.8In0.2As and Ga0.8In0.2N0.015As0.985 qu antum wells between 2 K and room temperature. A significant reduction in th e temperature dependence of the GaInNAs bandgap compared to nitrogen-free G aInAs is observed. The results are analysed using the band-anticrossing mod el, which accurately predicts the temperature dependence of the GaInNAs ene rgy gap from the behaviour of the GaInAs energy gap. We also compare the ba nd-anticrossing interaction parameter C-NM used to fit our data with other published values for GaNAs and GaInNAs. The results suggest that C-NM may n ot be independent of indium fraction.