Optical waveguide in X-cut LiNbO3 crystals by MeV P+ ion implantation withlow dose

Citation
F. Chen et al., Optical waveguide in X-cut LiNbO3 crystals by MeV P+ ion implantation withlow dose, PHYS ST S-A, 187(2), 2001, pp. 543-548
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
187
Issue
2
Year of publication
2001
Pages
543 - 548
Database
ISI
SICI code
0031-8965(200110)187:2<543:OWIXLC>2.0.ZU;2-D
Abstract
The X-cut, Y-propagation LiNbO3 crystals were implanted by 2.8 MeV P+ ions with doses of similar to1 x 10(14) ions/cm(2) at room temperature. Planar o ptical waveguides were formed by P+ implantation at doses of 1 x 10(14), 2 x 10(14), 3 x 10(14) and 4 x 10(14) ions/cm(2). Contrary to high-dose ion-i mplanted waveguides, the extraordinary refractive index was found to increa se in the guide region for implantation with low doses by the dark mode. Wh en the light beam was coupled to the LiNbO3 waveguide which was formed by M eV P+ implantation at a dose of 1 x 10(14) ions/cm(2) and a following annea ling at 200 degreesC for 30 min in air, obvious light was found propagating through the entire length of the waveguide, and Rutherford Backscattering (RBS)/channeling technique was used to characterize the lattice reconstruct ion of LiNbO3 crystals after the annealing treatment.