Optical characteristics of emission from beta-Ga2O3 with Group-VIb ions

Authors
Kim, JS Lee, SB Bahng, JH Choi, JC Park, HL Mho, SI Kim, TW Whang, YH Kim, GC
Citation
Js. Kim et al., Optical characteristics of emission from beta-Ga2O3 with Group-VIb ions, PHYS ST S-A, 187(2), 2001, pp. 569-573
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
187
Issue
2
Year of publication
2001
Pages
569 - 573
Database
ISI
SICI code
0031-8965(200110)187:2<569:OCOEFB>2.0.ZU;2-A
Abstract
The first synthesis of single phased gallium oxysulfide (beta -Ga2O3-xSx), gallium oxyselenide (beta -Ga2O3-xSex) and gallium oxytelluride (beta -Ga2O 3-xTex) was actualized. The luminescence intensity of Ga2O2.95S0.05 is the highest of the above samples, i.e.. it shows fourfold enhancement in compar ison with that of Ga2O3. Furthermore, the intensity of Ga2O2.95Se0.05 and G a2O2.95Te0.05 is lower than that of Ga2O3. Those trends are attributed to t he two effects of the electron delocalization and the distance between dono r and acceptor. The spectra of VIb-ion-doped samples. i.e., Ga2O2.95S0.05, Ga2O2.95Se0.05 and Ga2O2.95Te0.05, show a redshift behavior by 10 nm in com parison with that of Ga2O3. The redshift behavior can be explained by the N ephelauxetic effect. Our results showed a means of achieving emission inten sity enhancement through changing the cation environment in beta -Ga2O3.