Photoemission and cathodoluminescence in thermal silicon oxide films implanted with silicon

We studied the photo and cathodoluminescence of Silicon Rich Oxides (SRO) o btained by ion implant of Si in thermal oxides. Doses of 10(16) cm(-2) (low dose) and 10(17) cm(-2) (high dose) and implant energy of 150 keV were use d. The films were annealed for 30, 60 and 180 minutes in nitrogen at 1100 d egreesC. The spectra show photo and cathodoluminescence emission in the vis ible range; the bands in the spectra change with the conditions of ion impl ant and annealings. The films without thermal treatment in both doses prese nt photoluminescence bands around 1.9 eV (band B) and 2.4 eV (band C). With the thermal treatments, the band B disappears. In the case of the films wi th low dose, the band C shows a blue shift and a decrease in intensity. The high dose films have a band centered in 1.7 eV (band A) that increases its intensity with annealings. The cathodoluminescence bands in all the cases are in 2.7 eV (band D) and they present changes with the thermal treatments that it seems they depend on the variation in the implant parameters.