This review describes a new paradigm of electronics based on the spin degre
e of freedom of the electron. Either adding the spin degree of freedom to c
onventional charge-based electronic devices or using the spin alone has the
potential advantages of nonvolatility, increased data processing speed, de
creased electric power consumption, and increased integration densities com
pared with conventional semiconductor devices. To successfully incorporate
spins into existing semiconductor technology, one has to resolve technical
issues such as efficient injection, transport, control and manipulation, an
d detection of spin polarization as welt as spin-polarized currents. Recent
advances in new materials engineering hold the promise of realizing spintr
onic devices in the near future. We review the current state of the spin-ba
sed devices, efforts in new materials fabrication, issues in spin transport
, and optical spin manipulation.