Micro-photoluminescence and micro-Raman spectra of MOCVD Hg1-xCdxTe/Cd1-yZnyTe epitaxial films

Citation
H. Huang et al., Micro-photoluminescence and micro-Raman spectra of MOCVD Hg1-xCdxTe/Cd1-yZnyTe epitaxial films, SEMIC SCI T, 16(11), 2001, pp. L85-L88
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
11
Year of publication
2001
Pages
L85 - L88
Database
ISI
SICI code
0268-1242(200111)16:11<L85:MAMSOM>2.0.ZU;2-L
Abstract
The micro-Raman spectra of two MOCVD Hg1-x,CdxTe/Cd1-yZnyTe epitaxial film samples were measured at room temperature within the spectral range of 50 c m(-1) to 5000 cm(-1). In the spectrum of one sample, four main Raman shifts of the Hg1-xCdxTe epilayer were determined, while a quasi-periodic micro-p hotoluminescence structure in another sample was observed for the first tim e with no Raman shifts observed. X-ray double-crystal rocking curves and me tallographs of the etching pits were also obtained in order to check the st ructure quality of the two samples. Our results definitely show that the qu asi-periodic micro-photoluminescence structure is mainly due to the improve ment in quality of the Hg1-xCdxTe epilayer.