Monte Carlo analysis of dynamic and noise performance of submicron MOSFETsat RF and microwave frequencies

In this paper, an ensemble 2D bipolar Monte Carlo simulator is employed for the study of static characteristics, high-frequency response and noise beh aviour in a 0.3 mum gate-length n-MOSFET in common source configuration. Sh ort-channel effects, such as velocity overshoot in the pinch-off region, to gether with the appearance of hot electrons at the drain end of the channel are observed in the static characteristics. Admittance parameters and the small-signal equivalent circuit have been calculated in order to characteri ze the dynamic response of the device. The use of a bipolar simulator allow s one to study the dynamics of both types of carriers simultaneously. While the static results are dominated by the electron transport, the contributi on of holes mainly affects the drain-substrate capacitive coupling. The noi se behaviour of the simulated MOSFET is also studied (up to 40 GHz) by mean s of different parameters, such as the spectral densities of the current fl uctuations at the drain and gate terminals (and their cross-correlation), n ormalized alpha, beta and C parameters and N F-min. In the saturation regim e, due to the presence of hot carriers, an increase in drain and gate noise with respect to the long-channel prediction has been found. Moreover, a st ronger correlation between drain and gate noise is observed, especially at low drain current. Induced gate noise is found to play a crucial role in th e determination of N F-min at high drain currents.