Authors
Citation
M. Kosmulski, Comment on "Simulation of Ta2O5 gate ISFET temperature characteristics" byChou et al., SENS ACTU-B, 80(3), 2001, pp. 292-293
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005
→ ACNP
Volume
80
Issue
3
Year of publication
2001
Pages
292 - 293
Database
ISI
SICI code
0925-4005(200112)80:3<292:CO"OTG>2.0.ZU;2-Y