Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure

Authors
Bugaev, AA Nikitin, SE Terukov, EI
Citation
Aa. Bugaev et al., Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure, TECH PHYS L, 27(11), 2001, pp. 924-925
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
11
Year of publication
2001
Pages
924 - 925
Database
ISI
SICI code
1063-7850(2001)27:11<924:EOTMPT>2.0.ZU;2-T
Abstract
The temperature dependence of the electric capacitance of an aluminum-diele ctric-vanadium dioxide heterostructure was studied. The capacitance exhibit s a jumplike change in the region of the metal-semiconductor phase transiti on temperature. A qualitative model is suggested that relates a change in t he capacitance to a jump in the conductivity of vanadium caused by the phas e transition. (C) 2001 MAIK "Nauka/Interperiodica".