Recording of transmission phase gratings in glass by ion implantation

Citation
I. Banyasz et al., Recording of transmission phase gratings in glass by ion implantation, APPL PHYS L, 79(23), 2001, pp. 3755-3757
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
23
Year of publication
2001
Pages
3755 - 3757
Database
ISI
SICI code
0003-6951(200112)79:23<3755:ROTPGI>2.0.ZU;2-J
Abstract
Transmission phase gratings of grating constants of 4-12 mum have been desi gned and fabricated in glass via implantation of helium and nitrogen ions o f energies in the 500 keV-1.6 MeV range, through photoresist masks of thick ness of 3.3 mum. Multienergy implantations were applied, too. Phase profile s of the gratings were measured via interference and phase contrast microsc opy and scanning electron microscopy. Quasisinusoidal profiles were obtaine d for the finest gratings. The highest first order diffraction efficiencies were around 20%. Dependence of the efficiencies of the gratings on the ene rgy and dose of the implantation have been determined. (C) 2001 American In stitute of Physics.