Parametric fluorescence in oxidized aluminum gallium arsenide waveguides

Citation
A. De Rossi et al., Parametric fluorescence in oxidized aluminum gallium arsenide waveguides, APPL PHYS L, 79(23), 2001, pp. 3758-3760
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
23
Year of publication
2001
Pages
3758 - 3760
Database
ISI
SICI code
0003-6951(200112)79:23<3758:PFIOAG>2.0.ZU;2-Y
Abstract
Parametric fluorescence in low-loss oxidized aluminum gallium arsenide hete rostructure waveguides is quantitatively analyzed. A parametric fluorescenc e efficiency as high as 6x10(-7) W/W has been measured in a 3.2-mm-long wav eguide. This corresponds to a normalized conversion efficiency, scaled with the waveguide length, of about 1000% cm(-2) W-1, eight times higher than w ith LiNbO3 waveguides. This opens the perspective of a microoptical paramet ric oscillation threshold below 100 mW. (C) 2001 American Institute of Phys ics.