Band-gap energies of sol-gel-derived SrTiO3 thin films were studied in term
s of annealing temperature and film thickness. The band-gap energies of hig
hly crystallized films were comparable to those of single crystals reported
, whereas for poor-crystallized films, their band-gap energy values were mu
ch larger than those of single crystals. The larger band-gap energy shift w
as believed to be mainly due to both quantum size effect and existence of a
morphous phase in thin films. The band-gap energies also showed a strong de
pendence on film thickness. There was a critical film thickness (similar to
200 nm), above which the films had band-gap energies close to those of cry
stals or bulks, but below that, the values shifted largely, which can be at
tributed to the influence of crystallinity of thin films. Such a thickness
effect of band-gap energy should be of high interest in optical device appl
ications. (C) 2001 American Institute of Physics.