Intrinsic stress evolution in aluminum nitride thin films and the influence of multistep processing

Citation
A. Rajamani et al., Intrinsic stress evolution in aluminum nitride thin films and the influence of multistep processing, APPL PHYS L, 79(23), 2001, pp. 3776-3778
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
23
Year of publication
2001
Pages
3776 - 3778
Database
ISI
SICI code
0003-6951(200112)79:23<3776:ISEIAN>2.0.ZU;2-#
Abstract
Curvature measurements were used to investigate intrinsic stresses in AlN t hin films grown by molecular beam epitaxy. In situ stress evolution experim ents show that tensile stress is generated at the time where individual isl ands coalesce into a continuous film, and for some time after coalescence. Compressive stress is also generated both before and after coalescence. Int roducing an intermediate annealing stage appears to reduce tensile stress e volution after coalescence, ultimately increasing the final intrinsic compr essive stress. The maximum reduction in the tensile intrinsic stress is obt ained when the sample is annealed at roughly the time where the islands coa lesce into a continuous film.(C) 2001 American Institute of Physics.