Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

Citation
Me. Aumer et al., Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells, APPL PHYS L, 79(23), 2001, pp. 3803-3805
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
23
Year of publication
2001
Pages
3803 - 3805
Database
ISI
SICI code
0003-6951(200112)79:23<3803:SPFEOL>2.0.ZU;2-O
Abstract
We report on the effects of the piezoelectric field and well width on the t ransition energy and intensity for InGaN quantum well structures with GaN o r AlInGaN quaternary barriers. It was found that the emission energy of com pressively strained GaN/In0.08Ga0.92N quantum wells exhibits a strong well width dependence not accounted for by quantum confinement subband energy sh ifting alone. However, for unstrained quantum well layers with quaternary b arriers, no emission energy dependence on width was observed due to the eli mination of the piezoelectric field, which was measured to be at least 0.6 MV/cm for the strained quantum wells. Furthermore, the unstrained quantum w ells demonstrated a higher intensity than their strained counterparts for a ll quantum well widths investigated. The current data will help clarify the origin of emission in InGaN quantum wells. (C) 2001 American Institute of Physics.