Me. Aumer et al., Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells, APPL PHYS L, 79(23), 2001, pp. 3803-3805
We report on the effects of the piezoelectric field and well width on the t
ransition energy and intensity for InGaN quantum well structures with GaN o
r AlInGaN quaternary barriers. It was found that the emission energy of com
pressively strained GaN/In0.08Ga0.92N quantum wells exhibits a strong well
width dependence not accounted for by quantum confinement subband energy sh
ifting alone. However, for unstrained quantum well layers with quaternary b
arriers, no emission energy dependence on width was observed due to the eli
mination of the piezoelectric field, which was measured to be at least 0.6
MV/cm for the strained quantum wells. Furthermore, the unstrained quantum w
ells demonstrated a higher intensity than their strained counterparts for a
ll quantum well widths investigated. The current data will help clarify the
origin of emission in InGaN quantum wells. (C) 2001 American Institute of
Physics.