Beam model for calculating magnetostriction strains in thin films and multilayers

Citation
Rc. Wetherhold et Hd. Chopra, Beam model for calculating magnetostriction strains in thin films and multilayers, APPL PHYS L, 79(23), 2001, pp. 3818-3820
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
23
Year of publication
2001
Pages
3818 - 3820
Database
ISI
SICI code
0003-6951(200112)79:23<3818:BMFCMS>2.0.ZU;2-T
Abstract
A standard technique to measure the magnetostriction strain in thin films i nvolves measurement of the end deflection or slope of cantilever beams usin g optical deflectometry or capacitive methods. This article presents a gene ral beam model for inferring magnetostriction strain from the end deflectio n or slope data. This model greatly extends the range of applicability over existing shell models, allowing for inference of magnetostriction strains for practical film/substrate thickness ratios that are important in microel ectromechanical systems (MEMS) and bio-microelectromechanical systems (bio- MEMS). If the properties of individual layers are known, the beam theory ca n be used to design multilayer MEMS or bio-MEMs beams over a full range of thickness ratios. (C) 2001 American Institute of Physics.