X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition

Good ferroelectric properties have previously been reported for both the (1 -x)SrBi2Ti2O9-xBi(3)TiNbO(9) bulk ceramics and thin films. In this work, x- ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin film s. A better crystallization, larger grain size and larger displacement of t he Ta-O(4) or Ta-O(5) ions are the origin for the good ferroelectric proper ties of (1-x)SrBi2Ta2O9-xBi(3)TiNbO(9) with x=0.3-0.4. (C) 2001 American In stitute of Physics.