Faceting evolution during self-assembling of InAs/InP quantum wires

The self-assembling of InAs quantum wires on (001) InP substrates during ch emical beam epitaxy has been studied. The samples were characterized by ref lection high-energy electron diffraction (RHEED), atomic force microscopy, and high-resolution transmission electron microscopy (HRTEM). By monitoring the RHEED chevron structures along the [1 (1) over bar0] direction, we stu died the facets formation during the initial states of InAs growth. The fac ets angles measured by HRTEM are in perfect agreement with the angles betwe en chevron streaks. A time dependence of the chevron streaks angles is repo rted and correlated to the wire formation. These results can be interpreted using nonequilibrium models existing in literature. (C) 2001 American Inst itute of Physics.