Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

We have used low-energy electron microscopy to study spontaneous step forma tion in "striped" domains on ultraflat Si(001)-(2x1) surfaces during B2H6 e xposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting fact or is the supply of diffusing Si surface adatoms. By adding controlled amou nts of extra Si to ultraflat terraces, it is possible to foster the formati on of very large (>5 mum) single-domain striped regions with adjustable str ipe widths. (C) 2001 American Institute of Physics.