R. Srnanek et al., Diagnostics of Si multi-delta-doped GaAs layers by Raman spectroscopy on bevelled structures, APPL SURF S, 183(1-2), 2001, pp. 86-92
A new procedure for determination of the doping spikes location and the spa
tial extent of dopants in Si single and multi-delta -doped layers by micro-
Raman spectroscopy is presented. The procedure is based on the evaluation o
f I-TO/I-LO intensities along the bevelled structure. The obtained values o
f Si extent from 4.0 to 4.5 nm are in good coincidence with values presente
d in the literature. After calibration, the procedure will be suitable for
direct estimation of dopant profiles in delta -doped layers in semiconducto
r materials, where a bevel through the structures can be prepared. (C) 2001
Published by Elsevier Science B.V.