Diagnostics of Si multi-delta-doped GaAs layers by Raman spectroscopy on bevelled structures

A new procedure for determination of the doping spikes location and the spa tial extent of dopants in Si single and multi-delta -doped layers by micro- Raman spectroscopy is presented. The procedure is based on the evaluation o f I-TO/I-LO intensities along the bevelled structure. The obtained values o f Si extent from 4.0 to 4.5 nm are in good coincidence with values presente d in the literature. After calibration, the procedure will be suitable for direct estimation of dopant profiles in delta -doped layers in semiconducto r materials, where a bevel through the structures can be prepared. (C) 2001 Published by Elsevier Science B.V.