Microlithographic assessment of a novel family of transparent and etch-resistant chemically amplified 193-nm resists eased on cyclopolymers

The evaluation and structural optimization of a family of single layer, pos itive tone, chemically amplified resists for 193-nm lithography is presente d. The resists are formulated from cyclopolymeric materials in which the na ture, etch properties, and spatial disposition of the substituents are syst ematically varied. Their lithographic performance is evaluated on the basis of the interplay between chemical structure, molecular weight, and comonom er composition. These materials have good optical clarity at the desired wa velength, excellent resolution to ca. 90 nm with a phase-shifting mask, and outstanding reactive ion etch resistance.