Superconducting film injected by ions from pulsed energetic dense plasma source

The oxygen and silicon ions have been obtained respectively from pulsed ene rgetic dense oxygen plasma and silane plasma generated by electrodeless dis charge. The oxygen ions have been injected into superconducting Nb films, a nd the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auge r profile data show that the injection depths range from 20 to 40nm the fil ms, depending on the injection condition and film material. The resistance- temperature relations (R-T curves) indicate that the superconductivity rema ins unchanged in the photoresist-masked part of the film, but is significan tly changed in the exposed part. The evenness of the film surface remains u nchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-la yer structure of superconducting films, and also possibly to the convention al plasma source ion implantation technique in material surface processing.