Charge carrier dynamics in Zn-doped cuprates

Citation
Hh. Klauss et al., Charge carrier dynamics in Zn-doped cuprates, HYPER INTER, 133(1-4), 2001, pp. 203-206
Citations number
10
Categorie Soggetti
Physics
Journal title
HYPERFINE INTERACTIONS
ISSN journal
03043843 → ACNP
Volume
133
Issue
1-4
Year of publication
2001
Pages
203 - 206
Database
ISI
SICI code
0304-3843(2001)133:1-4<203:CCDIZC>2.0.ZU;2-T
Abstract
We have measured the static magnetic susceptibility, the resistivity and mu on spin relaxation (mu +SR) spectra of Zn and Sr doped La2CuO2. Our data sh ow that non-magnetic Zn impurities lead to an increase of the Neel temperat ure T-N in weakly hole doped compounds. This increase of T-N correlates wit h an increase of the resistivity. The analysis of our data strongly suggest s that the hole mobility is the most important source for the strong suppre ssion of long range antiferromagnetic order in La2-xSrxCuO4.