Effect of In content in InxGa1-xSb on breaking of ampoule during growth byvertical directional solidification

InGaSb crystals have been grown using. vertical directional solidification (VDS) technique in: closed conical quartz ampoules. InxGa1-xSb Crystals wit h different In mole fractions in the melt (x = 0.1, 0.25, 0.5 and 0.75) hav e been grown to study the effect of mole fraction on the breaking of the am poule. Growth with In mole fraction x =. 0.5 in the melt resulted in breaki ng of the ampoule. For other compositions, no breaking, of the ampoule occu rred. The problem of breaking of ampoule was circumvented by encapsulating the material containing quartz ampoule in another quartz ampoule. The doubl e. ampoule prevents the melt from coming into contact with atmospheric air in case of a breakage enabling the growth of crystals from melts with 50%, In composition. Sticking of the ingot to the ampoule has not been observed for any of the compositions.