Growth of 3C-SiC on Si substrate with Ge1-0.63C0.63 buffer layer

We report the strain buffer effects of the Gel(1-0.63)C(0.63) layer on the growth of the 3C-SiC film on the Si(001) substrate. The introduction of the Gei(1-0.63)C(0.63) buffer layer with a suitable thickness results in cryst al growth of the 3C-SiC film on the Si substrate. The crystal growth of the 3C-SiC film is related to a crystallization process of the Gel(1-0.63)C(0. 63) buffer layer during the film growth.