Ordering InAs quantum dots formation on GaAs/InP by low pressure metal-organic chemical vapor deposition

Authors
Yin, JZ Wang, XQ Du, GT Yin, ZY Li, MT Li, ZT Yang, SR
Citation
Jz. Yin et al., Ordering InAs quantum dots formation on GaAs/InP by low pressure metal-organic chemical vapor deposition, JPN J A P 1, 40(10), 2001, pp. 5889-5892
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
10
Year of publication
2001
Pages
5889 - 5892
Database
ISI
SICI code
Abstract
In the paper, a thin tensile GaAs interlayer was used to get regular arrang ement of InAs quantum dots (QDs) on InP substrate by low pressure metal-org anic chemical vapor deposition (LP-MOCVD). The characterizations of the InA s QDs have been investigated by Photoluminescence (PL) spectrum, atomic for ce microscopy (AFM) image and Raman spectrum. The theoretical calculations have been performed. The conclusions coincide with our experiment results w ell.