Characteristics of deep submicron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors

Based on the hydrodynamic energy transport model, the electrical characteri stics of grooved-gate p-channel metal-oxide-semiconductor field-effect tran sistors (PMOSFETs) are studied and compared with those of corresponding con ventional planar PMOSFETs. The simulations reveal that the short-channel ef fect and drain-induced barrier lowering (DIBL) are absent in grooved-gate P MOSFETs, which have good hot-carrier effect immunity, but the drain current driving capability is lower than that in planar ones. Subsequently, the re asons for these differences between grooved-gate and planar PMOSFETs are an alyzed from the viewpoint of interior physical parameter distribution. Thes e parameters include surface potential, electric field, hot-carrier velocit y, temperature and so forth.