High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate

Epitaxial layers of AlGaN/GaN were grown on semi-insulating (SI) silicon ca rbide (SiC) by metalorganic chemical vapor deposition (MOCVD) with a very h igh electron sheet carrier density n(s) = 1.2 x 10(13) cm(-2) and a Hall ca rrier mobility as high as mu (H) = 1281 cm(2)/Vs at room temperature. High- electron-mobility transistors (HEMTs) have been demonstrated using an AlGaN /GaN heterostructure on a SI-SiC substrate. The fabricated 2.2-mum-gate-len gth Al0.26Ga0.74N/GaN HEMTs exhibited extrinsic transconductance as high as 287 mS/mm with drain-source current density as high as 857 mA/mm. This is the first report of such high transconductance achieved so far for 2.2-mum- gate-length Al(0.2)6Ga(0.74)N/GaN HEMTs on SI-SiC substrates. A very small percentage (3%) of drain-source current density reduction at the gate volta ge of +1.5 V has been observed for HEMTs on SI-SiC substrates. The observat ion of high extrinsic transconductance can be explained with the help of in trinsic transconductance values.