GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Oxygen implantation has been employed to form a high-resistance region betw een the channel and the surface of GaAs metal-semiconductor field-effect tr ansistors (MESFETs). Comparable DC and RF performances were achieved for ME SFETs with and without oxygen implants; however, MESFETs with the extra oxy gen-implantation demonstrated good breakdown performance, less frequency di spersion of drain current, and good time dependence of drain Current it 150 degreesC in air.