Y. Kawamoto et al., Preparation and etching processing of planar thin film of Pr3+-doped fluorozirconate glass, J MATER SCI, 36(20), 2001, pp. 5013-5016
Planar thin-films of a 60ZrF(4). 35BaF(2). 5PrF(3) composition were success
fully prepared from Zr(hfa)(4), Ba(hfa)(2)(tg), Pr(fod)(3) and NF3 by an el
ectron cyclotron resonance plasma-enhanced chemical vapor deposition techni
que. The films obtained were colorless and amorphous. As etching processing
of the prepared thin-film, dry etching was performed using Ar, CF4, SF6, C
l-2 and Cl-2-BCl3 gases. The Ar etching in which no reactive ion-etching is
anticipated exhibited the fastest etching rate. Wet etching was also perfo
rmed using a ZrOCl2-HCl etching solution. The etching rate was extremely fa
st compared with those of dry etching. In this etching, however, undesirabl
e side-etching occurred. At the present stage, therefore, the most preferab
le etching processing is dry etching by an Ar gas. (C) 2001 Kluwer Academic
Publishers.