Ce-doped BaTiO3 thin films prepared on silicon-platinium by r.f. sputtering
has been investigated. BaTiO3 doped with 5.5 mol%CeO2 thin film was deposi
ted at 550 degreesC substrate temperature in an Ar atmosfere. The crystal s
tructure and shape were examined by X-ray diffraction and scanning electron
microscopy with EDAX. Analysis by X-ray diffraction patterns show that the
crystalline film with a cubic structure of BaTiO3, was obtained. The surfa
ce morphology (roughness, the grain size and the droplet size) of the thin
film surface was examined by atomic force microscopy (AFM). The grain size
is about 160 nm, the droplet size is about 0.675 mum and the roughness is 3
6.88 nm. EDAX analysis established a composition of the film to be identica
l with that of the target (BaTiO3 doped with 5.5 mol%CeO2). The broad peak
in the capacitance versus temperature curve at the Curie point indicate tha
t the r.f. sputtered Ce-doped BaTiO3 film is ferroelectric. The values of t
he capacitance of the thin film at 1 KHz were found to be 86 pF and the los
s dielectric was tan delta = 0.0875. The film exibits a dielectric anomaly
peak at 23 degreesC showing ferroelectric to paraelectric phase transition.
(C) 2001 Kluwer Academic Publishers.