IRON-BORON PAIR IN SILICON - OLD PROBLEM ANEW

For the iron-boron pair in the p-type silicon two different configurat ions of the defect are observed: stable and metastable. The reported m etastable configuration is the first step in a dissociation process of the stable, i.e. of trigonal symmetry, configuration of the pair. Rat e equations for the two-step iron-boron pair dissociation allowed us t o evaluate the dissociation rates for both configurations of the pair. The driving force for the creation and, then, dissociation of the met astable pair is the minority carrier injection followed by the electro n-hole recombination process in the space charge region. A use of the high-resolution Laplace-transform deep level transient spectroscopy al lowed us to demonstrate for both of the configurations the influence o f the magnetic field on the hole emission.