Radiation induced recombination processes in AIN ceramics

Luminescence processes are studied for aluminum nitride, AIN, ceramics afte r exposure to ionizing radiation and ultraviolet radiation (UVR) using the methods of photoluminescence (PL), optically stimulated luminescence (OSL) and thermoluminescence (TL). The luminescence processes are explained in te rms of radiation-induced charge transfer and radiative recombination of the donor-acceptor pairs, based on oxygen-related defects of the AIN crystalli ne lattice. The comparative effects of the two types of radiation, the effi ciency of TL and OSL and the optimal sintering procedure of the ceramics ar e discussed for an AIN ceramic proposed for potential application in dosime try.