Shallow versus deep hydrogen states in ZnO and HgO

Citation
Sfj. Cox et al., Shallow versus deep hydrogen states in ZnO and HgO, J PHYS-COND, 13(40), 2001, pp. 9001-9010
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
13
Issue
40
Year of publication
2001
Pages
9001 - 9010
Database
ISI
SICI code
0953-8984(20011008)13:40<9001:SVDHSI>2.0.ZU;2-X
Abstract
The muonium states mimicking interstitial hydrogen in ZnO and HgO are compa red. Whereas in ZnO a theoretically predicted shallow donor state is confir med, in HgO we find a considerably deeper state. The respective ionization temperatures are around 40 K and 150 K and the donor ionization energies ar e 19 +/-1 and 136 +/-3 meV, deduced from the temperature dependence of the mu SR (muon spin-rotation) signal amplitudes. The mu SR spectra provide a c omprehensive characterization of the undissociated paramagnetic states: the hyperfine parameters, which measure the electron spin density on and near the muon, differ by a factor of similar to 30. These define a hydrogenic ra dius of 1.1 mn in ZnO but indicate a much more compact electronic wavefunct ion in HgO, more akin to those of Mu* and the AA9 centre in Si. These data should largely carry over to hydrogen as a guide to its electrical activity in these materials.