Native defects and complexes in SiC

Citation
F. Bechstedt et al., Native defects and complexes in SiC, J PHYS-COND, 13(40), 2001, pp. 9027-9037
Citations number
53
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
13
Issue
40
Year of publication
2001
Pages
9027 - 9037
Database
ISI
SICI code
0953-8984(20011008)13:40<9027:NDACIS>2.0.ZU;2-4
Abstract
Prototypical native defects, in particular monovacancies, are studied using ab initio density functional theory and the local spin-density approximati on. Several properties such as the energetics, geometry, electronic structu re, and spin states are discussed regarding their dependence on the chemica l nature, the preparation conditions, and the polytype of the SiC crystal. Consequences of the defects are derived for the doping behaviour, electrica l properties, and photoluminescence spectra.