Effect of chemical element doping and sintering atmosphere on the microwave dielectric properties of barium zinc tantalates

Citation
Js. Kim et al., Effect of chemical element doping and sintering atmosphere on the microwave dielectric properties of barium zinc tantalates, J EUR CERAM, 21(15), 2001, pp. 2599-2604
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
21
Issue
15
Year of publication
2001
Pages
2599 - 2604
Database
ISI
SICI code
0955-2219(2001)21:15<2599:EOCEDA>2.0.ZU;2-Y
Abstract
The microwave dielectric properties, long range ordering (LRO) of Zn/Ta sit es, and extra phase formation were studied in Ba(Zn-1/3 Ta-2/3)O-3 ceramics doped with 0-4 mol% BaWO4 under varying sintering conditions. The sinterin g atmosphere was either air or ZnO-powder muffling. The LRO were analyzed b y Rietveld refinement method using X-ray diffraction data. The Q.f values w ere extremely low for samples prepared under ZnO-muffling regardless of the degrees of LRO. Maximum Q.f values were 160,000-200,000 GHz at 0.5-1.5 mol % BaWO4 doping. The extra phases formed during sintering in air and under Z nO-muffling were analyzed in detail. The air sintered specimens showed Ba7T a6O22 as a major extra phase accompanied by ZnO-loss; in ZnO-muffled specim ens BaWO4 was a dominant extra phase. During the ZnO-loss process point def ects in the Zn/O sites could be introduced into BZT. (C) 2001 Elsevier Scie nce Ltd. All rights reserved.