Synthesis and properties of dielectric Bi-2(Zn1/3Nb2/3)(2)O-7 thin films

Crystalline, Bi-2(Zn1,3Nb2.3)(2)O-7, BiZN thin films can be easily obtained when the films were in-situ deposited at high enough substrate temperature 450-600 degreesC (30 min). The optical parameters (N=n+ik) measured and an alyzed by optical transmission spectroscopy are insensitive to the depositi on parameters, provided that the films are crystalline. The dielectric prop erties converted from optical parameters are epsilon'= 4.75 and Q = 325. Th e dielectric constant of BiZN thin films in THz frequency regime, (epsilon' )(fTHz) = 32, is markedly smaller than the epsilon' value of BiZN bulk mate rials in microwave regime, and the quality factor of the thin films is less than 20% of the bulk materials. However, the dielectric constant of the th in films in THz region is still markedly larger than that derived from opti cal transmission spectroscopy in optical region. (C) 2001 Elsevier Science Ltd. All rights reserved.