Lv. Asryan et Ra. Suris, CHARGE NEUTRALITY VIOLATION IN QUANTUM-DOT LASERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 148-157
Theory of quantum-dot (QD) lasers is augmented to include, in a self-c
onsistent manner, the QD-layer charge, The electron- and hale-level oc
cupancies in QD's are obtained through the solution of the problem for
the electrostatic-field distribution across the junction. They are sh
own to differ from each other, As a result, the local neutrality is br
oken down in each QD, i.e., the QD layer Is charged, The key dimension
less parameters controlling the difference of the hole- and electron-l
evel occupancies are revealed, The detailed analysis of the gain and s
pontaneous radiative recombination current density is Siren, having re
gard to the bet of violation of the charge neutrality in QD's, The gai
n-current density dependence is calculated, The voltage dependences of
the electron- and hole-level occupancies, gain, and current density a
re obtained, Particular emphasis is given to the transparency and lasi
ng threshold characteristics. Optimization of the QD-laser structure i
s carried out. The optimum surface density of QD's, minimizing the thr
eshold current density, is shown to be distinctly higher than that cal
culated without regard for the lack of the charge neutrality in QD's.