CHARGE NEUTRALITY VIOLATION IN QUANTUM-DOT LASERS

Citation
Lv. Asryan et Ra. Suris, CHARGE NEUTRALITY VIOLATION IN QUANTUM-DOT LASERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 148-157
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
3
Issue
2
Year of publication
1997
Pages
148 - 157
Database
ISI
SICI code
1077-260X(1997)3:2<148:CNVIQL>2.0.ZU;2-Y
Abstract
Theory of quantum-dot (QD) lasers is augmented to include, in a self-c onsistent manner, the QD-layer charge, The electron- and hale-level oc cupancies in QD's are obtained through the solution of the problem for the electrostatic-field distribution across the junction. They are sh own to differ from each other, As a result, the local neutrality is br oken down in each QD, i.e., the QD layer Is charged, The key dimension less parameters controlling the difference of the hole- and electron-l evel occupancies are revealed, The detailed analysis of the gain and s pontaneous radiative recombination current density is Siren, having re gard to the bet of violation of the charge neutrality in QD's, The gai n-current density dependence is calculated, The voltage dependences of the electron- and hole-level occupancies, gain, and current density a re obtained, Particular emphasis is given to the transparency and lasi ng threshold characteristics. Optimization of the QD-laser structure i s carried out. The optimum surface density of QD's, minimizing the thr eshold current density, is shown to be distinctly higher than that cal culated without regard for the lack of the charge neutrality in QD's.