STRAIN-OVERCOMPENSATED GAINP-ALGAINP QUANTUM-WELL LASER STRUCTURES FOR IMPROVED RELIABILITY AT HIGH-OUTPUT POWERS

Authors
VALSTER A MENEY AT DOWNES JR FAUX DA ADAMS AR BROUWER AA CORBIJN AJ
Citation
A. Valster et al., STRAIN-OVERCOMPENSATED GAINP-ALGAINP QUANTUM-WELL LASER STRUCTURES FOR IMPROVED RELIABILITY AT HIGH-OUTPUT POWERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 180-187
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
IEEE journal of selected topics in quantum electronics → ACNP
ISSN journal
1077260X
Volume
3
Issue
2
Year of publication
1997
Pages
180 - 187
Database
ISI
SICI code
1077-260X(1997)3:2<180:SGQLSF>2.0.ZU;2-A
Abstract
Strain-overcompensated multiple-quantum-well (MQW) laser structures ha ve been analyzed theoretically as well as experimentally far the first time, Strain overcompensation reduces the bandgap shrinkage that norm ally takes place at the facets of compressively strained layers becaus e of strain relaxation. This results in a lower absorption of the lase r spot leading to a remarkable improvement of the reliability of high- power Baser diodes.