ROOM-TEMPERATURE LASING OPERATION OF GAINNAS-GAAS SINGLE-QUANTUM-WELLLASER-DIODES

We have succeeded in demonstrating continuous-wave (CW) operation of G aInNAs-GaAs single-quantum-well (SQW) laser diodes st room temperature (RT). The threshold current density was about 1.4 kA/cm(2), and the o perating wavelength was approximately 1.18 mu m far a broad-stripe,geo metry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum, The full-angle-half-power far-field beam dive rgence measured parallel and perpendicular to the junction plane was 4 .5 degrees and 45 degrees, respectively. A high characteristic tempera ture (T-0) of 126 K under CW operation and a small wavelength shift pe r ambient temperature change of 0.48 nm/degrees C under pulsed operati on were obtained, These experimental results indicate the applicabilit y of GaInNAs to long-wavelength laser diodes with excellent high-tempe rature performance.