PICOSECOND PULSE AMPLIFICATION IN TAPERED-WAVE-GUIDE LASER-DIODE AMPLIFIERS

The amplification characteristics of picosecond Gaussian pulses in con ventional nontapered and both linear and exponential tapered-waveguide (TW) laser-diode amplifier (LDA) structures have been studied, ?the a nalysis is based on numerical simulation of the rate equation which al so takes into account the effect of lateral carrier density distributi on The amount of pulse distortion experienced within the amplifier for input pulses having energies E-in = 0.1E(sat(in)) = 0.475 pJ (where E -sat(in) is the input saturation energy of the amplifier) and E-in = E -sat(in) = 4.75 pJ have been analyzed for each structure which has a l ength of 900 mu m and an input width Of 1 mu m. It has been found that the TW-LDA provides higher gain saturation and hence imposes less dis tortion oat the amplified pulse as compared with a conventional nontap ered LDA. The amplified 10-ps pulse used in this study experiences alm ost no broadening in the TW-LDA, whereas it suffers from broadening in the conventional nontapered LDA, The carrier density distribution and the dependence of the amplifier gain on the input pulse energy have a lso been studied for both nontapered and tapered amplifier structures. For example, in a TW-LDA with an output width of 20 mu m and a length of 900 mu m, the exponential structure provides 9-dB improvement in s aturation energy as compared with the conventional amplifier. This imp rovement is about 10.5 dB in linear TW-LDA's.