0.98-MU-M MULTIPLE-QUANTUM-WELL TUNNELING INJECTION-LASER WITH 98-GHZINTRINSIC MODULATION BANDWIDTH

We demonstrate GaAs - based 0.98-mu m multiple-quantum-well (MQW) tunn eling injection lasers with ultrahigh-modulation bandwidths, Electrons are injected into the active region via tunneling, leading to a ''col d'' carrier distribution in the quantum wells (QW's), The tunneling ti me (similar to 2 ps) measured by time resolved differential transmissi on spectroscopy agrees with the capture time extracted form the electr ical impedance measurement, The tunneling barrier prevents electrons f rom going over the active region into the opposite cladding layer, The carrier escape time in tunneling injection lasers is larger than that in conventional QW lasers. Enhanced differential gain, minimized gain compression and improved high frequency performance have been achieve d, The -3-dB modulation bandwidth is 48 GHz and the maximum intrinsic modulation bandwidth is as high as 98 GHz.