OPTICAL CHARACTERIZATION OF INAS MONOLAYER QUANTUM STRUCTURES GROWN ON (311)A, (311)B, AND (100)GAAS SUBSTRATES

Authors
XU SJ CHUA SJ ZHANG X ZHANG ZH LUO CP YUAN ZL XU ZY ZHOU JM
Citation
Sj. Xu et al., OPTICAL CHARACTERIZATION OF INAS MONOLAYER QUANTUM STRUCTURES GROWN ON (311)A, (311)B, AND (100)GAAS SUBSTRATES, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 471-474
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
IEEE journal of selected topics in quantum electronics → ACNP
ISSN journal
1077260X
Volume
3
Issue
2
Year of publication
1997
Pages
471 - 474
Database
ISI
SICI code
1077-260X(1997)3:2<471:OCOIMQ>2.0.ZU;2-9
Abstract
Low-temperature photoluminescence and excitation spectra from InAs mon olayer quantum structures, grown on (311)A, (311)B, and (100) GaAs sub strates, are investigated, The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE), The experimental results s how that the quality of InAs monolayer on (311)B GaAs substrate is obv iously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer g rown on (311) GaAs substrates shift to higher energy with respect to t hat from the InAs layer grown on (100) GaAs substrate.