ELECTRO-OPTO-THERMAL MODELING OF THRESHOLD CURRENT DEPENDENCE ON TEMPERATURE

Authors
Citation
Ds. Ellis et Jm. Xu, ELECTRO-OPTO-THERMAL MODELING OF THRESHOLD CURRENT DEPENDENCE ON TEMPERATURE, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 640-648
Citations number
31
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
3
Issue
2
Year of publication
1997
Pages
640 - 648
Database
ISI
SICI code
1077-260X(1997)3:2<640:EMOTCD>2.0.ZU;2-D
Abstract
A self-consistent model of semiconductor quantum-well (QW) lasers is p resented and deployed here for the study of threshold current dependen ce on temperature. The simulated dependencies of threshold current-den sity on temperature and cavity lengths agree well with experiments pub lished by Evans et al. Aided with detailed knowledge so obtained of ea ch contributor to the threshold current, attempts are made to gain ins ights into the well-known Pankove and other newly proposed empirical r elations. The relative importance of the various mechanisms are evalua ted, and self-heating is shown as an important factor determining the threshold current at high temperature.