C. Gavrilov et M. Sheintuch, ETCHING OF MASS, SURFACE, AND POROUS FRACTAL SOLIDS, Industrial & engineering chemistry research, 36(8), 1997, pp. 2915-2923
To study fractal aspects of reactive etching, we consider three types
of solids with surface, mass, and pore fractality. An analytical solut
ion for etching of the solid boundary in the form of a Koch curve demo
nstrates that in the absence of diffusion resistance bifractal structu
res are formed due to screening effects. Over a certain domain the sur
face area scales like t(1-Df). Stochastic simulation of etching of sol
id clusters, obtained by diffusion-limited aggregation (DLA), shows th
at the dynamics strongly depend on the value of fractal dimension. Ana
lytical approximation for the dynamics of etching based on the DLAs de
nsity distribution was obtained, showing that the mass scales like (1-
Kt)(Df), where K is a certain constant, and was in excellent agreement
with the simulation. The simulation of etching of a Sierpinski-gasket
fractal and the corresponding uniform-pore object of the same size, p
orosity, and reactive area demonstrates the combined influence of diff
usion resistance optimization and fractal geometry on the character of
etching. The etching of fractal structures is significantly faster in
the regions of strong and moderate diffusion resistance. In the regio
n of strong diffusion resistance the rates of etching declined monoton
ically with time. The reaction occurred in a narrow penetration layer,
and fractality did not break. No simple scaling is evident in this ca
se.