Creep behaviour of MoSi2-SiC and MoSi2-HfO2

Authors
Hvizdos, P Besterci, M Ballokova, B Scholl, R Bohm, A
Citation
P. Hvizdos et al., Creep behaviour of MoSi2-SiC and MoSi2-HfO2, MATER LETT, 51(6), 2001, pp. 485-489
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
51
Issue
6
Year of publication
2001
Pages
485 - 489
Database
ISI
SICI code
0167-577X(200112)51:6<485:CBOMAM>2.0.ZU;2-E
Abstract
Creep resistance of two MoSi2-based materials containing SiC and HfO2 parti cles, respectively, in ambient atmosphere was studied in the temperature ra nge 1100-1400 degreesC under a load of 100 MPa. The microstructure and its response to hi.-h-temperature load were investigated by TEM using the thin foil technique. Comparison of the creep resistance of both materials at eac h particular testing temperature shows that the performance of MoSi2-HfO2 i s about one order of magnitude better than the other one. (C) 2001 Elsevier Science B.V. All rights reserved.